Method of etching tungsten or tungsten nitride electrode gates in semiconductor structures

ABSTRACT

The present invention relates to a method of etching tungsten or tungsten nitride in semiconductor structures, and particularly to the etching of gate electrodes which require precise control over the etching process. We have discovered a method of etching tungsten or tungsten nitride which permits precise etch profile control while providing excellent selectivity, of at least 175:1, for example, in favor of etching tungsten or tungsten nitride rather than an adjacent oxide layer. Typically, the oxide is selected from silicon oxide, silicon oxynitride, tantalum pentoxide, zirconium oxide, and combinations thereof. The method appears to be applicable to tungsten or tungsten nitride, whether deposited by physical vapor deposition (PVD) or chemical vapor deposition (CVD). In particular, an initial etch chemistry, used during the majority of the tungsten or tungsten nitride etching process (the main etch), employs the use of a plasma source gas where the chemically functional etchant species are generated from a combination of sulfur hexafluoride (SF 6 ) and nitrogen (N 2 ), or in the alternative, from a combination of nitrogen trifluoride (NF 3 ), chlorine (Cl 2 ), and carbon tetrafluoride (CF 4 ). Toward the end of the main etching process, a second chemistry is used in which the chemically functional etchant species are generated from Cl 2  and O 2 . This final portion of the etch process may be referred to as an “overetch” process, since etching is carried out to at least the surface underlying the tungsten or tungsten nitride. However, this second etch chemistry may optionally be divided into two steps, where the plasma source gas oxygen content and plasma source power are increased in the second step.

RELATED APPLICATIONS

This application is a continuation-in-part of U.S. application Ser. No.09/614,396, filed Jul. 12, 2000.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention pertains to a method of etching tungsten ortungsten nitride electrode gates in semiconductor structures. Inparticular, one etch chemistry is used during the majority of theetching process and a second etch chemistry is used toward the end ofthe etching process.

2. Brief Description of the Background Art

Semiconductor devices as a whole typically include self-aligned contactstructures and gate electrodes which are fabricated from multiple filmlayers of differing compositions. Tungsten nitride films have previouslybeen used as barrier layers, and tungsten has been used as a conductorin various semiconductor device structures. Recently, both tungsten andtungsten nitride have been developing as gate materials, as a result ofsmaller device geometries.

In many instances, the tungsten or tungsten nitride film (layer) isdeposited over a thin (less than about 50 Å thick) silicon oxideinorganic dielectric layer. During patterned etching of the multiplefilm layer structure, it is desired to plasma dry etch through thetungsten or tungsten nitride layer and to stop etching at the surface ofthe silicon oxide layer. This makes it important that the etchselectivity for etching of tungsten or tungsten nitride (in preferenceover silicon oxide) be high. (The term “selectivity” is typically usedto refer to a ratio of etch rates of two materials.) Further, as thedevice geometries become smaller, etching of layers of material must bemore precise, providing a profile which permits placement of moredevices over a given surface area. In the case of a tungsten gate, forexample, the gate may be in the form of a thin line or pad, and thecross-sectional profile of the etched gate feature is preferably onewhere the sidewalls of the etched feature are essentially perpendicularto an underlying silicon oxide substrate layer, for example. This meansthe tungsten must be completely etched to the surface of the siliconoxide substrate layer (no residual “feet” at the bottom of the etchedtungsten sidewall). Control of the etch process is critical in providingproper etched tungsten feature profile while avoiding etching awaycritical thickness of the underlying silicon oxide film substrate.

One reference describes a dry etching method wherein a multilayer filmincluding one selected from tungsten, molybdenum, and a silicidethereof, is etched as the first layer. Underlying the “first layer” is asecond layer of polycrystalline silicon, which overlies a silicon oxideinsulation film. The etching step for the first layer uses a plasmaetchant source gas made up of a first gas selected from fluorine, sulfurhexafluoride, and nitrogen trifluoride, or a mixture gas containing thefirst gas and a second gas selected from hydrogen chloride, hydrogenbromide, chlorine, bromine, and carbon tetrachloride. Etching of thesecond layer of polycrystalline silicon is carried out using a plasmaetchant source gas made up of the second gas and a third gas selectedfrom an inert gas, nitrogen gas, oxygen gas, silicon tetrachloride gas,and carbon monoxide gas. In the second etch step, the amount of thethird gas added to the second gas should preferably be in the rangebetween 0 and 10 volume % of the total etching gas mixture.

Another reference discloses a method for fabricating a silicon-based MOStransistor having an inverse-T refractory metal gate structure. The gatefabricated comprises a main CVD tungsten portion and a lower sputteredtungsten portion outwardly extending from the bottom of the CVD portion.A Cl₂/O₂ plasma etch is used to etch the CVD tungsten layer and achemical etch (KH₂PO₄/KOH/K₃Fe(CN)₆) is used to etch the sputteredtungsten portion. The sputtered tungsten layer is said to act as ashield to protect the underlying gate oxide layer from ion damagethroughout the fabrication process. In particular, the sputteredtungsten is said to be more resistant to Cl₂/O₂ reactive ion etch thanis CVD tungsten.

Another reference describes a method of fabricating sidewall spacers fora self-aligned contact hole. A metal, such as tungsten, is RIE etchedusing a conventional etchback procedure, without the use of aphotoresist masking, using a Cl₂—SF₆—BCl₃—Ar etchant gas mixture forplasma generation.

For further background information, the reader is directed to U.S. Pat.No. 5,295,923, to Hori et al.; U.S. Pat. No. 5,599,725, to Dorleans etal.; and U.S. Pat. No. 6,033,962, to Jeng et al.

SUMMARY OF THE INVENTION

The present invention relates to a method of etching tungsten ortungsten nitride in semiconductor structures, and particularly to theetching of gate electrodes which require precise control over theetching process. We have discovered a method of etching tungsten ortungsten nitride which permits precise etch profile control whileproviding excellent selectivity in favor of etching tungsten (ortungsten nitride) rather than a thin underlying oxide layer. Typically,the oxide is selected from silicon oxide, silicon oxynitride, tantalumpentoxide, zirconium oxide, and combinations thereof. The method appearsto be applicable to tungsten or tungsten nitride, whether deposited byphysical vapor deposition (PVD) or chemical vapor deposition (CVD).

In particular, an initial etch chemistry, used during the majority ofthe tungsten or tungsten nitride etching process (the main etch),employs the use of a plasma source gas where the chemically functionaletchant species are typically generated from a combination of sulfurhexafluoride (SF₆) and nitrogen (N₂), or in the alternative, from acombination of nitrogen trifluoride (NF₃), chlorine (Cl₂), and carbontetrafluoride (CF₄). Toward the end of the main etching process, asecond chemistry is used in which the chemically functional etchantspecies are generated from Cl₂ and O₂. This final portion of the etchprocess may be referred to as an “overetch” process, since etching iscarried out to at least the surface underlying the tungsten or tungstennitride. However, this second etch chemistry may optionally be dividedinto two steps, where the plasma source gas oxygen content and plasmasource power are increased in the second step.

We have discovered that an unexpectedly high etch selectivity fortungsten in preference over an underlying oxide layer (in the range of175:1, for tungsten:silicon oxide, for example) may be obtained when asufficiently high concentration of O₂ is used in combination with asufficiently high plasma density. In particular, when the O₂concentration is greater than about 20% by volume in the plasma sourcegas, further increases in O₂ content have a limited effect at plasmadensities below about 8×10¹⁰ e⁻/cm³, because there is insufficient powerinput to energize the active oxygen species. To obtain selectivity infavor of etching tungsten or tungsten nitride relative to an underlyingoxide layer, it is necessary to increase both the oxygen content of theplasma source gas and the source power applied to create and maintainthe plasma. For example, at a plasma density of about 1.6×10¹¹ e⁻/cm³,and a substrate bias voltage of about −90 V (about 90 W applied bias),an increase in plasma source gas oxygen content from about 30 volumepercent to about 40 volume percent produces an increase in selectivityfor etching tungsten relative to silicon oxide from about 40:1 to about75:1. However, at 40 volume percent O₂, if the plasma density isincreased to about 1.8×10¹¹ e⁻/cm³, the selectivity for etching tungstenrelative to silicon oxide unexpectedly increases from about 75:1 toabout 160:1.

Although carrying out the “overetch” step at the conditions whichproduce the highest selectivity protects the underlying oxide layer, theetched tungsten or tungsten nitride feature profile may be affected bythe rapid tungsten etch rates obtained (about 1800 Å per minute at theconditions which produce 175:1 tungsten:silicon oxide selectivity). Toenable maintenance of feature profile while removing residual tungsten“feet” at the base of a feature, it may be advantageous to etch underconditions which provide a lower selectivity, of about 30:1tungsten:silicon oxide, for example, and a tungsten etch rate of about1000 Å per minute, and then change process conditions to those whichprovide a selectivity of 175:1 tungsten:silicon oxide and a tungstenetch rate of about 10-15 Å per minute for a limited time at the end ofthe etch, to clean residue off the oxide flat surface surrounding theetched feature in general.

When the underlying dielectric layer comprises tantalum pentoxide, wehave discovered that the source gas composition and process conditionsdescribed above provide an almost infinite selectivity for etchingtungsten relative to the underlying tantalum pentoxide layer. Thisextraordinarily high tungsten tantalum pentoxide etch selectivity allowsa thinner tantalum pentoxide dielectric layer to be used (relative to acorresponding silicon oxide layer). The tantalum pentoxide layertypically may have a thickness of less than about 100 Å, preferablywithin the range of about 30 Å to about 50 Å. The thinness of the oxidelayer can be important in terms of increasing a semiconductor devicespeed.

We have discovered that tantalum pentoxide is more resistant to ionbombardment than silicon oxide; this permits a higher substrate biaspower to be used during the tungsten overetch step when tantalumpentoxide is used as the underlying oxide layer. The use of a higherbias power (from about 100 W up to about 300 W) during the overetch stepprovides improved profile control (i.e., a more vertical profile isobtained), while maintaining a high selectivity for etching tungstenrelative to the underlying tantalum pentoxide. When a higher bias poweris employed, a plasma source gas having a lower oxygen content can beused.

When the underlying oxide layer comprises tantalum pentoxide, a tungstenetch rate of about 2000 Å per minute can be achieved while maintaining atungsten:tantalum pentoxide etch selectivity of about 75:1 or better. Inparticular, one etch process includes using a plasma source gas having avolumetric percentage of O₂ of about 20%, with a plasma density withinthe range of about 4.0×10¹⁰ e⁻/cm³ to about 6.0×10¹⁰ e⁻/cm³, a plasmasource power within the range of about 400 W to about 600 W, a substratebias power of about 175 W, and a process chamber pressure of about 4mTorr, for example. To enable maintenance of feature profile whileremoving residual tungsten “feet” at the base of a feature, it may beadvantageous to adjust the etch conditions toward the end of the etch.For example, the final etch conditions may provide a selectivity of atleast 175:1 tungsten:tantalum pentoxide, where the tungsten etch rate isless than about 1000 Å per minute. This etch selectivity and etch ratecan be obtained by using a plasma source gas having a volumetricpercentage of O₂ of about 20%, with a plasma density of about 2.0×10¹⁰e⁻/cm³, a plasma source power of about 200 W, a substrate bias power ofabout 175 W, and a process chamber pressure of about 6 mTorr, forexample.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 shows a schematic of the plasma processing apparatus which wasused to carry out the etching processes described herein.

FIGS. 2A and 2B show schematics of photomicrographs of etched tungstenwhen no overetch step is used, i.e., there is no change in the etchchemistry toward the end of the tungsten etching, and the etch isstopped in sufficient time to avoid etching an underlying silicon oxidesubstrate.

FIG. 3 shows a schematic of a photomicrograph of etched tungsten wherethere is a change in the etch chemistry toward the end of the tungstenetching, and etching is permitted to continue to the surface of thesilicon oxide substrate.

FIG. 4 is a graph showing that an increase in oxygen content of a plasmasource gas has a diminishing effect on the etch rate of a silicon oxidesubstrate, when all other process variables are held constant.

FIG. 5A is a graph showing the effect of increasing the plasma sourcepower on the etch rate of tungsten; the etch rate of silicon oxide; andon the selectivity (in terms of an increase in etch rate of tungstenrelative to the etch rate of silicon oxide) during an overetch step,when the oxygen concentration is about 20% by volume.

FIG. 5B is a three-dimensional graph showing tungsten etch rate in anoveretch step, as a function of plasma source power and oxygen flowrate, all other variables held constant.

FIG. 5C is a three-dimensional graph showing silicon oxide etch rate inan overetch step, as a function of plasma source power and oxygen flowrate, all other variables held constant.

FIG. 5D is a three-dimensional graph showing selectivity (etch rateratio of W:SiO_(x)) as a function of plasma source power and oxygen flowrate, all other variables held constant.

FIG. 6A shows a beginning semiconductor structure 600 for performing anembodiment of the method of the invention for etching tungsten, when theunderlying dielectric layer is tantalum pentoxide. The semiconductorstructure 600 includes, from top to bottom, a patterned silicon nitridehard mask layer 612, a patterned silicon oxynitride ARC layer 610, atungsten layer 608, a tungsten nitride wetting layer 606, and a tantalumpentoxide layer 604, all deposited on a silicon substrate 602. Therelative thicknesses of the film stack layers are not shown to scale.

FIG. 6B shows the semiconductor structure 600 after etching through amajor portion of the tungsten 608/tungsten nitride 606 during the mainetch step.

FIG. 6C shows the semiconductor structure 600 after performance of theoveretch step. The entire thickness of the tungsten 608/tungsten nitride606 has been etched through, exposing the upper surface of the tantalumpentoxide layer 604.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

The present disclosure relates to a method of etching tungsten ortungsten nitride in semiconductor structures. In particular, the methodpertains to the etching of feature sizes of less than 0.5 μm, wherecontrol of etch selectivity of tungsten or tungsten nitride relative toa thin layer (typically less than about 50 Å) of an underlying oxide isof primary importance. The term “feature” typically refers to metallines, trenches and openings in a dielectric layer, as well as otherstructures which make up the topography of the substrate surface.

In particular, an initial etch chemistry, used during the majority ofthe tungsten or tungsten nitride etching process, is typically oneemploying a plasma source gas comprising at least one halogen-basedchemically functional etchant species. The halogen is typicallyfluorine, chlorine, or combinations thereof. A source gas comprisingfluorine species is preferably used, because the fluorine is capable ofremoving oxides and other residues which may form on the surface of thetungsten if it is exposed to air during processing. If the plasma sourcegas used during the main tungsten etch step does not include fluorinespecies (for example, if Cl₂ is used), a breakthrough etch stepemploying a plasma generated from a fluorine-containing gas may beneeded in order to remove the tungsten oxide from the substrate surfaceprior to etching of the tungsten layer. Typical process conditions forthe breakthrough etch are as follows: 50-200 sccm CF₄; 4-10 mTorrprocess chamber pressure; 300-1000 W source power; 40-200 W substratebias power; and 50° C. substrate temperature. Other fluorine-containinggases, such as SF₆ or NF₃, for example, can be used in place of, or incombination with, CF₄. A non-reactive diluent gas, such as, for example,argon, may be used in combination with the fluorine-containing gas. Atypical duration for the breakthrough etch is approximately 10 seconds.

The tungsten main etch is preferably performed using a plasma source gaswhere the chemically functional etchant species are generated fromsulfur hexafluoride (SF₆) and nitrogen (N₂), or from a combination ofNF₃, Cl₂, and CF₄. These etch chemistries provide a rapid tungsten etchrate with excellent etch profile characteristics, and do not require theperformance of a breakthrough etch prior to the main tungsten etch.

For example, in one embodiment, the main etch is carried out using asource gas consisting of SF₆ and N₂. The volumetric flow rates for SF₆typically range from about 30 sccm to about 100 sccm in a CENTURA®DPS™processing chamber. The volumetric flow rates for N₂ typically rangefrom about 30 sccm to about 100 sccm as well. The preferred volumetricratio of SF₆:N₂ generally ranges from about 20:50 to about 60:10. Theprocess chamber pressure ranges from about 2 mTorr to about 20 mTorr,and is preferably maintained at a pressure within a range of about 2mTorr to about 10 mTorr. The substrate temperature ranges from about 20°C. to about 100° C., with lower temperatures being preferred, sinceapparatus costs are lower and the possibility of damage to a gate oxideis reduced. The applied plasma source power ranges from about 200 W toabout 2000 W, and the applied substrate biasing power ranges from about40 W to about 200 W. ( The term “plasma source power” typically refersto the power that is responsible for sustaining the plasma by providinga major portion of the energy to ionize the neutral species in thechamber, while the term “substrate bias power” typically refers to thepower applied to the substrate to attract high energy plasma speciestoward the substrate.) Using conditions within the ranges justdescribed, adjusted for apparatus variables, a tungsten or tungstennitride etch rate ranging from about 1500 to about 4000 Å per minute isobtained. During the etching of fine (about 0.15 μm in width) lines, theprofile of the line sidewall relative to the underlying substratesurface is vertical at about 88° to 90° (discounting “feet” which may beformed near the base of the sidewall).

Toward the end of the etching process, a second chemistry is used inwhich the chemically functional etchant species are generated from Cl₂and O₂. The process during etch of the remaining portion of the tungstenmay be referred to as an overetch process, since the etch is carried outto the surface of an underlying film surface and may etch for a limiteddistance into the underlying film surface. However, this second etchchemistry may optionally be divided into two steps, where the oxygencontent and plasma source power are increased during the second step.

To obtain a satisfactory etch rate for the tungsten or tungsten nitrideand the desired selectivity in favor of etching tungsten relative to anunderlying silicon oxide gate layer, the volumetric percentage of the O₂in a Cl₂/O₂ source gas mixture is controlled to range from greater than20% up to about 45%. Preferably, the volumetric percentage of O₂ in aCl₂/O₂ source gas mixture ranges from about 35% to about 45%. However,to obtain the benefit of the O₂ content specified above, the plasmadensity in the etch process chamber must be sufficiently high. We havedetermined that a plasma density of at least about 8×10¹⁰ e⁻/cm³ ( aplasma source power of about 800 W in a CENTURA®DPS™ processing chamberavailable from Applied Materials, Inc., of Santa Clara, Calif.) isrequired to obtain benefit from increasing the volumetric percentage ofoxygen above 20%. (The term “decoupled plasma source” or “DPS” as usedherein refers to a plasma etch apparatus with separate controls for theinductively coupled RF source power used to generate and maintain aplasma and the bias power applied to a semiconductor substrate to directhigh energy species toward the substrate).

An alternative to using a single overetch step is to use a two-stepoveretch process. For example, after the main etch step, a firstoveretch step may be carried out in which the plasma source gascomposition is a combination of Cl₂ and O₂, where the volumetric contentof O₂ ranges from greater than 20% to about 35%. The plasma densitytypically ranges from about 8.0×10¹⁰ e⁻/cm³ (800 W applied source powerand a process chamber pressure of 4-6 mTorr) to about 1.6×10¹¹ e⁻/cm³(1600 W applied source power and a process chamber pressure of 4×6mTorr). The process chamber pressure may range from about 2 mTorr toabout 10 mTorr, and preferably between about 2 mTorr and 6 mTorr. Thesubstrate temperature ranges from about 20° C. to about 100° C. Theapplied substrate biasing power ranges from about 40 W to about 200 W.Using conditions within these ranges, adjusted for apparatus variables,a “foot” which forms at the bottom of the fine line can be removed,while maintaining the line profile at the vertical 88° to 90° profile.

Subsequently, a second overetch or finishing step is carried out, toclean etch residue from the surface of an underlying thin oxide film,without significant etching into the film (less than 10% of the thinoxide film thickness is etched). In the second overetch step, theselectivity in favor of etching tungsten or tungsten nitride relative toan underlying oxide film is critical. It is desired to remove tungstenor tungsten nitride residue from the flat surface of the thin oxidelayer surrounding the etched feature without etching through the thinoxide layer. Again, the chemical etchants in the plasma source gas areCl₂ and O₂, where the volumetric percentage of O₂ in the mixturetypically ranges from about 36% to about 41%. The plasma densitytypically ranges from about 1.6×10¹¹ e⁻/cm³ to about 2.0×10¹¹ e⁻/cm³,with the other process conditions being the same as those specifiedabove for the first overetch step. A tungsten etch rate under theseprocess conditions is about 1750 Å per minute, while the selectivity(W:SiO_(x)) is about 175:1. Increased plasma source gas O₂ content andincreased plasma densities are expected to be useful as well.

The selectivity of 175:1 obtained using the process conditions justdescribed may be compared with the selectivity obtained using otherprocess conditions which, at first glance, do not appear to besignificantly different, but which provide surprisingly differentresults. For example, a change in the O₂ flow rate to provide avolumetric concentration of O₂ of 36%, in combination with a plasmadensity of 1.6×10¹¹ e⁻/cm³ (1600 W), provides a W:SiO_(x) selectivity ofabout 75:1; and a volumetric concentration of O₂ of 20%, in combinationwith a plasma density of 1.5×10¹¹ e⁻/cm³ (1500 W), provides a W:SiO_(x)selectivity of about 28:1. As these data indicate, there is anunexpected increase in selectivity in favor of etching tungsten ortungsten nitride relative to silicon oxide which occurs as a result ofincreasing the oxygen flow rate and the plasma density above particularranges simultaneously. This is further illustrated in the Examplesprovided below.

The oxide layer underlying the tungsten or tungsten nitride layer mayalternatively comprise tantalum pentoxide, zirconium oxide, or siliconoxynitride, instead of silicon oxide. We have discovered that, when theunderlying oxide layer comprises tantalum pentoxide, that a highersubstrate bias power can be employed during the tungsten overetch step.The use of a higher bias power (about 100 W up to about 300 W) duringthe overetch step provides improved profile control (i.e., a morevertical profile is obtained), while maintaining a high selectivity (atleast 75:1) for etching tungsten relative to the underlying tantalumpentoxide. Typically, a plasma source gas having a volumetric percentageof O₂ within the range of about 20% to about 50% is employed, with aplasma density within the range of about 2.0×10¹⁰ e⁻/cm³ to about1.8×10¹¹ e⁻/cm³. In the exemplary DPS system, this can be achieved usinga plasma source power within the range of about 200 W to about 1800 W, asubstrate bias power within the range of about 100 W to about 200 W, anda process chamber pressure within the range of about 2 mTorr to about 10mTorr. Tungsten etch rates of greater than 1000 Å per minute aretypically obtained using this process regime to etch tungsten over anunderlying tantalum pentoxide layer.

As a preface to the detailed description of the Examples, it should benoted that, as used in this specification and the appended claims, thesingular forms “a”, “an”, and “the” include plural referents, unless thecontext clearly dictates otherwise. Thus, for example, the term “asemiconductor” includes a variety of different materials which are knownto have the behavioral characteristics of a semiconductor.

I. An Apparatus for Practicing the Invention

The embodiment etch processes described herein were carried out in aCENTURA® Integrated Processing System, available from Applied Materials,Inc., of Santa Clara, Calif. Although the etch process chamber used inthe EXAMPLES presented herein is shown in schematic in FIG. 1, any ofthe etch processors available in the industry should be able to takeadvantage of the etch chemistry described herein, with some adjustmentto other process parameters. The equipment shown in schematic in FIG. 1includes a Decoupled Plasma Source (DPS) of the kind described by Yan Yeet al. at the Proceedings of the Eleventh International Symposium ofPlasma Processing, May 7, 1996, and as published in the ElectrochemicalSociety Proceedings, Volume 96-12, pp. 222-233 (1996). The plasmaprocessing chamber enables the processing of an 8 inch (200 mm) diameterwafer.

FIG. 1 shows a schematic of a side view of an individual CENTURA®DPS™polysilicon etch chamber 100. The etch chamber 100 consists of an upperchamber 104 having a ceramic dome 106, and a lower chamber 108. Thelower chamber 108 includes a monopolar electrostatic chuck (ESC) cathode110. Gas is introduced into the chamber via gas injection nozzles 114for uniform gas distribution. Chamber pressure is controlled by aclosed-loop pressure control system (not shown) using a throttle valve118. During processing, a substrate 120 is introduced into the lowerchamber 108 through inlet 122. The substrate 120 is held in place bymeans of a static charge generated on the surface of electrostatic chuck(ESC) cathode 110 by applying a DC voltage to a conductive layer (notshown) located under a dielectric film (not shown) on the chuck surface.The cathode 110 and substrate 120 are then raised by means of a waferlift 124 and sealed against the upper chamber 104 in position forprocessing. Etch gases are introduced into the upper chamber 104 via gasinjection nozzles 114. The etch chamber 100 uses an inductively coupledplasma source power 126 and matching network 128 operating at 12.56 MHzfor generating and sustaining a medium to high density plasma. The waferis biased with an RF source 130 and matching network 132 operating at13.56 MHz. Plasma source power 126 and substrate biasing means 130 arecontrolled by separate controllers (not shown).

II. Examples of Embodiments of the Invention

FIG. 2A shows a cross-sectional side view schematic of an etchedtungsten structure 200, where the etched pattern is lines 203 and spaces205. The line width is approximately 0.165 μm, and the space width isapproximately 0.21 μm. The structure includes a thin (≈45 Å) siliconoxide layer 213 on a silicon substrate 202, overlying silicon oxidelayer 213 is a 1650 Å thick layer of tungsten 204, a 400 Å thickimage-focusing antireflective coating (ARC) layer 206, and the residue208 of a photoresist layer which was used to pattern the etchedstructure 200. The tungsten layer 204 includes a thin (˜100 Å) wettinglayer of tungsten nitride (not shown) which aids in adhesion of thetungsten to the silicon oxide layer 213. The tungsten nitride is etchedduring the same etch process as the tungsten. Therefore, as used herein,the term “tungsten layer” refers to a layer of tungsten, optionally incombination with a thin underlying layer of tungsten nitride.

FIG. 2B shows a more three-dimensional view of the same etched structure200, showing the surface finish 222 of the etched tungsten in the bottomof a trench (space 205), and the smoother upper surface 224 of theoverlying photoresist layer residue 208. Both Figures show a remainingunetched tungsten thickness 214 overlying upper surface 210 of siliconoxide layer 213. The unetched tungsten thickness 214 is about 0.023 μm.

The tungsten 204 etch was carried out using only a single etchchemistry, in which the etchant species in the plasma were SF₆ at 30sccm and N₂ at 50 sccm. (There was no second etch chemistry used to etchthe final portion of the tungsten layer 204 to the surface 210 of oxidelayer 213, i.e., there was no overetch carried out.) Other etch processconditions were as follows: The etch process chamber pressure was about4 mTorr; the substrate temperature was about 50° C.; the plasma sourcepower was about 500 W; the substrate bias power was about 80 W. The etchprofile obtained was good, with the sidewall angle of the etched lines203 from silicon oxide layer 213 surface 210 being about 89°; however,there was some tapering of the profile at the base of the line, sincethe tungsten was not etched all the way to the surface 210 of siliconoxide layer 203. The tungsten etch rate was about 1500 Å per minute. Theterm “tapered” profile, with reference to an etched pattern of lines andspaces, refers to a cross-sectional profile where the width of the lineis wider at the base of the line than at the top surface of the line. A“vertical profile” is one where the side walls of the lines areperpendicular to the surface of the silicon oxide substrate. An“undercut” profile is one where the width of the line is more narrow atthe base of the line than at the top surface of the line. A verticalprofile is typically preferred, because it enables closer placement ofdevice structures on a given surface area.

As shown in FIG. 2B, the etched tungsten surface 222 at the bottom ofspaces 205 exhibited a rougher finish than the line 203 upperphotoresist residue 208 surface 224.

FIG. 3 shows a schematic of a photomicrograph of etched tungsten 300where there is a change in the etch chemistry toward the end of thetungsten 304 etching, and etching is permitted to continue to thesurface 310 of the thin silicon oxide layer 313. Again, the etchedtungsten structure was a pattern of lines 303 and spaces 305. The linewidth is approximately 0.120 Åμm, and the space width is approximately0.165 μm. The structure included a thin (≈45 Å) silicon oxide layer 313on a silicon substrate 302, a 1650 Å thick overlying layer of tungsten304 (i.e., tungsten/tungsten nitride, as described above with referenceto FIG. 2), a 400 Å thick image-focusing antireflective coating (ARC)layer 306, and a photoresist layer residue 308.

The tungsten 304 etch was carried out using two etch chemistries. Duringthe first portion of the etching, the chemically reactive etchantspecies in the plasma were SF₆ at 30 sccm and N₂ at 50 sccm (i.e., 37.5volume % SF₆, 62.5 volume % N₂). Other etch process conditions were asfollows: The etch process chamber pressure was about 4 mTorr; thesubstrate temperature was about 50° C.; the plasma source power was 500W; the substrate bias power was about 80 W. The etch profile obtainedwas good, with the sidewall angle of the etched lines 303 from siliconoxide substrate 302 surface 310 being about 89°. The tungsten etch ratewas about 1650 Å per minute. Approximately 1500 Å of the initial 1650 Åthickness of the tungsten layer 304 was etched using this first etchchemistry.

Etching of the remaining 150 Å of tungsten layer 304 was carried outusing a plasma in which the chemically reactive etchant species wereproduced from a source gas of Cl₂ at a flow rate of about 70 sccm and O₂at a flow rate of about 40 sccm. Other etch process conditions were asfollows: The etch process chamber pressure was about 6 mTorr; thesubstrate temperature was about 50° C.; the plasma source power was 600W; the substrate bias power was about 80 W. The etch profile obtainedwas excellent, with the sidewall angle of the etched lines 303 fromsilicon oxide substrate 302 surface 310 being about 89° to 90°. Thetungsten etch rate was about 1500 Å per minute. The etching was allowedto continue until the upper surface of the silicon oxide substrate 310was slightly etched. It was determined that the silicon oxide etch ratewas about 19 Å per minute. The etch rate selectivity of tungsten:siliconoxide was about 79:1. Tungsten residue was cleared off the space 305open areas, but there was a slight tungsten “foot” (not shown) at thebottom of tungsten lines 303 in the areas where the spacing betweenlines was less than that shown in FIG. 3 (in the more dense areas).Subsequent experimentation demonstrated that adjustment of the O₂ flowrate to 45 sccm, the plasma source power to 1800 W, and the processchamber pressure to 3 mTorr results in removal of the “foot”.

FIG. 4 is a graph 400 showing the etch rate (shown on axis 404) ofsilicon oxide as a function of the plasma source gas oxygen flow rate(shown on axis 402). The data shown in graph 400 were obtained byetching a layer of silicon oxide only, which was deposited on a siliconwafer. The total flow of Cl₂ and O₂ used was 110 sccm, and the volume %of oxygen in the plasma source gas may be calculated by dividing thesccm shown on axis 402 by the total gas flow 100 sccm and multiplying by100. The other etch process conditions used during the silicon oxideetching were as follows: The etch process chamber pressure was about 6mTorr; the substrate temperature was about 50° C.; the plasma sourcepower was about 1600 W; the substrate bias power was about 80 W. Graph400 indicates that there is a diminishing effect obtained by increasingthe O₂ flow rate, with the etch rate leveling out at about 19 Å perminute between about 35 sccm and 40 sccm of O₂. We later discovered thatit was necessary to increase the plasma density (plasma source power) toobtain the full benefit of an increase in the O₂ flow rate over about 35sccm.

FIG. 5A is a graph 500 showing the effect of increasing the plasmasource power (shown in Watts on axis 502), on the etch rate of tungsten(W) (shown by curve 508) and on the etch rate of SiO_(x) (shown by curve510), at a constant O₂ flow rate of about 20 sccm. The etch rate unitsin each case are shown on axis 504. Graph 500 also shows the selectivityfor W:SiO_(x) as a function of the plasma source power, illustrated bycurve 512, at the constant O₂ flow rate of 20 sccm. The nominalselectivity is shown on axis 506. As can be observed from graph 500, anincrease in plasma source power results in an increase in tungsten etchrate, a decrease in SiO_(x) etch rate, and an increase in selectivity.However, at an O₂ flow rate of 20 sccm, up to a plasma source power ofabout 1600 W, the selectivity of W:SiO_(x) is only about 40:1. Theprocess chamber pressure was about 6 mTorr, and the substratetemperature was about 50° C.

FIG. 5B is a three-dimensional graph 530 showing tungsten etch rate inan overetch step, as a function of plasma source power and oxygen flowrate, all other variables held constant. In particular, the wafer etchedwas a sputtered tungsten layer overlying a silicon wafer. The processchamber pressure was 6 mTorr, and the substrate temperature was about50° C. The tungsten etch rate units (Å/min.) are shown on axis 534, theplasma source power units (W) are shown on axis 532, and the O₂ flowrate units (sccm) are shown on axis 536. Curve 538 clearly shows that anincrease in O₂ flow rate alone from about 30 sccm to about 40 sccm, withplasma source power held constant at about 1600 W, increased thetungsten etch rate from about 1170 Å/min. to about 1500 Å/min. Asimultaneous increase in O₂ flow rate from about 30 sccm to about 45sccm, and increase in plasma source power from about 1600 W to about1800 W, increased the tungsten etch rate from about 1170 Å/min. to about1750 Å/min.

FIG. 5C is a three-dimensional graph 540 showing silicon oxide etch ratein an overetch step, as a function of plasma source power and oxygenflow rate, all other variables held constant. In particular, the waferetched was a silicon substrate having a layer of thermal silicon oxideon its surface. The process chamber pressure was 6 mTorr, and thesubstrate temperature was about 50° C. The silicon oxide etch rate units(Å/min.) are shown on axis 544, the plasma source power units (W) areshown on axis 542, and the O₂ flow rate units (sccm) are shown on axis546. Curve 538 shows that an increase in O₂ flow rate alone from about20 sccm to about 40 sccm, with plasma source power held constant atabout 1600 W, decreased the silicon oxide etch rate from about 37 Å/min.to about 19 Å/min. A simultaneous increase in O₂ flow rate from about 20sccm to about 45 sccm, and increase in plasma source power from about1600 W to about 1800 W, decreased the silicon oxide etch rate from about37 Å/min. to about 10 Å/min.

FIG. 5D is a three-dimensional graph 550 showing selectivity (etch rateratio of W:SiO_(x)) as a function of plasma source power and oxygen flowrate, all other variables held constant. FIG. 5D is derived from FIGS.5B and 5C, and makes apparent the striking increase in selectivity whichcan be achieved by increasing both the oxygen flow rate and the plasmasource power simultaneously. The selectivity (W:SiO_(x)) nominal unitsare shown on axis 554, the plasma source power units (W) are shown onaxis 552, and the O₂ flow rate units (sccm) are shown on axis 556. Curve558 shows that an increase in O₂ flow rate alone from about 30 sccm toabout 40 sccm, with plasma source power held constant at about 1600 W,increased the selectivity from about 50:1 to about 80:1. A simultaneousincrease in oxygen flow rate from about 30 sccm to about 45 sccm, andincrease in plasma source power from about 1600 W to about 1800 W,increased the selectivity from about 50:1 to about 175:1. For example, aselectivity of about 100:1 is obtained when the O₂ content is about 40%,and the plasma source power is about 1670 W. A selectivity of about175:1 is obtained when the O₂ content is about 45% and the plasma sourcepower is about 1800 W. An increase in the selectivity to 175:1 wasunexpected in view of the much smaller increase in selectivity obtainedwhen only the oxygen flow rate was increased.

To better appreciate this surprising increase in selectivity, it ishelpful to compare FIG. 5D with FIG. 5A. FIG. 5A showed that when theoxygen flow rate was held constant at about 20 sccm, and the plasmasource power was increased from about 800 W up to about 1600 W, theselectivity of W:SiO_(x) increased from about 19:1 to about 40:1.Further, as illustrated in FIG. 5D, an increase in oxygen flow rate fromabout 30 sccm to about 40 sccm, with the plasma source power heldconstant at 1600 W, provided a selectivity increase from about 50:1 toabout 80:1. It was only with the synergistic combination of increasedoxygen flow rate and increased plasma source power that a selectivity of175:1 was achieved.

Table I, below, provides a summary of various process conditions and thetungsten (or tungsten nitride) etch rate which is expected to beobtained at those process conditions. Table I also shows the selectivityrelative to silicon oxide which is expected to be obtained, and theetched sidewall profile angle which is expected to be obtained.

TABLE I Typical Process Conditions During Final Portion Etching(Overetch) of Tungsten or Tungsten Nitride With Underlying Silicon OxideLayer Process Condition Process Condition Process Condition and BroadPreferred Result Range and Results Range and Results Total Gas Flow 50-200  75-125 (sccm) O₂ Flow Rate >20-60   30-50 (sccm) Vol. % O₂ inmixt. of O₂ >20-50   30-40 and Cl₂ Substrate  20-100 40-60 Temperature(° C.) Process Chamber Pressure (mTorr)  2-20 3-6 Source Power (W) 800-3000 1400-1800 Substrate Bias Power (W)  40-200  80-100 Etch Rate Wor WN₂ 1000-3000 1500-2000 (Å/min) Selectivity 10:1 to 200:1 100:1 to175:1 W:SiO₄ Etched Profile, Vertical or 88-90° vertical profile Taperedor Undercut (°) 89-90°

The dielectric layer underlying the tungsten or tungsten nitride layermay alternatively comprise tantalum pentoxide, zirconium oxide, orsilicon oxynitride, instead of silicon oxide. FIG. 6 illustrates anembodiment of the method of the invention for etching tungsten, when theunderlying dielectric layer is tantalum pentoxide. FIG. 6A shows abeginning semiconductor structure 600 prior to performance of the methodof the invention. The structure 600 includes a thin (50 Å) tantalumpentoxide layer 604 on a silicon substrate 602, overlying tantalumpentoxide layer 604 is a 300 Å thick wetting layer of tungsten nitride606, a 700 Å thick layer of tungsten 608, a 300 Å thick image-focusingantireflective coating (ARC) layer 610 (in this case, siliconoxynitride), and a 1500 Å thick silicon nitride hard mask layer 612,which is used to pattern etch the structure 600. The silicon nitridehard mask layer 612 and silicon oxynitride ARC layer 610 have beenpreviously patterned using techniques known in the art.

Etching of the tungsten 608/tungsten nitride 606 was carried out usingtwo etch chemistries. During the first portion of the etching, thechemically reactive etchant species in the plasma were SF₆ at 20 sccmand N₂ at 45 sccm (i.e., 31 volume % SF₆, 69 volume % N₂). Other etchprocess conditions were as follows: The etch process chamber pressurewas about 4 mTorr; the substrate temperature was about 50° C.; theplasma source power was 200 W; the substrate bias power was about 175 W.The tungsten/tungsten nitride etch rate was about 2000 Å per minute. Asshown in FIG. 6B, almost all (at least 950 Å) of the initial 1000 Åcombined thickness of the tungsten 608/tungsten nitride 606 was etchedusing this first etch chemistry, with a small amount oftungsten/tungsten nitride residue remaining at the bottom of thefeature.

Etching of the remaining tungsten 608/tungsten nitride 606 was carriedout using a plasma in which the chemically reactive etchant species wereproduced from a source gas of Cl₂ at a flow rate of about 72 sccm and O₂at a flow rate of about 18 sccm. Other etch process conditions were asfollows: The etch process chamber pressure was about 4 mTorr; thesubstrate temperature was about 50° C.; the plasma source power was 400W; the substrate bias power was about 175 W. The tungsten/tungstennitride etch rate was about 1871 Å per minute. The etching was allowedto continue until the upper surface of the tantalum pentoxide layer 604was slightly etched, as shown in FIG. 6C. It was determined that thetantalum pentoxide etch rate was about 20 Å per minute. The etch rateselectivity of tungsten:tantalum pentoxide was about 94:1. The etchprofile obtained was about 89° to 90°.

When the underlying oxide layer comprises tantalum pentoxide, we havediscovered that we can use the same source gas composition and processconditions during the tungsten overetch step as those which were usedwhen silicon oxide was used as the underlying layer. Since the tantalumpentoxide is resistant to ion bombardment which occurs duringanisotropic etching, we can achieve an almost infinite selectivity foretching tungsten relative to an underlying tantalum pentoxide layer.This extraordinarily high tungsten:tantalum pentoxide etch selectivityallows a thinner tantalum pentoxide layer to be used (relative to acorresponding silicon oxide layer). The tantalum pentoxide layertypically has thickness of less than about 100 Å, preferably within therange of about 30 Å to about 50 Å. The thinness of the oxide layer canbe important in terms of increasing a semiconductor device speed.

Our discovery that tantalum pentoxide is more resistant to ionbombardment than silicon oxide permits a higher substrate bias power tobe used during the tungsten overetch step over an underlying tantalumpentoxide layer. The use of a high bias power (from about 100 W up toabout 300 W) during the overetch step provides improved profile control(i.e., a more vertical profile is obtained), while maintaining a highselectivity for etching tungsten relative to the underlying tantalumpentoxide. When a higher bias power is employed, a plasma source gashaving a lower oxygen content can be used.

When the underlying oxide layer comprises tantalum pentoxide, a tungstenetch rate of about 2000 Å per minute can be achieved while maintaining atungsten:tantalum pentoxide etch selectivity of about 75:1 or betterusing a plasma source gas having a volumetric percentage of O₂ of about20%, with a plasma density within the range of about 4.0×10¹⁰ e⁻/cm³ toabout 6.0×10¹⁰ e⁻/cm³, which may be achieved in the exemplary DPSchamber using a plasma source power within the range of about 400 W toabout 600 W, a substrate bias power of about 175 W, and a processchamber pressure within the range of about 4 mTorr. To enablemaintenance of feature profile while removing residual tungsten “feet”at the base of a feature, it may be advantageous to adjust the etchconditions toward the end of the etch. For example, the final etchconditions may provide a selectivity of at least 175:1 tungsten:tantalumpentoxide, where the tungsten etch rate is less than about 1000 Å perminute. This etch selectivity and etch rate can be obtained by using aplasma source gas having a volumetric percentage Of O₂ of about 20%,with a plasma density of about 2.0×10¹⁰ e⁻/cm³, which can be achieved inthe exemplary DPS chamber using a plasma source power of about 200 W, asubstrate bias power of about 175 , and a process chamber pressure ofabout 6 mTorr.

Experimental results obtained by varying particular process parameters(O₂ flow rate, process chamber pressure, plasma source power, substratebias power) during tungsten overetching are presented in Table II,below.

TABLE II Tungsten Overetch with Underlying Tantalum Pentoxide Layer,Development Data Run # 1 2 3 4 5 6 7 Cl₂ Flow Rate 72 72 72 72 72 72 72(sccm) O₂ Flow Rate 18 18 18 22 26 18 18 (sccm) Vol. % O₂ 20 20 20 23.426.5 20 20 Process Chamber 4 4 6 4 4 4 4 Pressure (mTorr) Plasma Source200 200 200 200 200 400 600 Power (W) Substrate Bias 175 100 175 175 175175 175 Power (W) Substrate 50 50 50 50 50 50 50 Temperature (° C.) WEtch Rate 634 344 1014 481 42 1871 2198 (Å/min.) Ta₂O₅ Etch Rate 22 125.7 5.3 4.7 20 28 (Å/min.) W:Ta₂O₅ Etch 29:1 29:1 178:1 90:1 9:1 94:179:1 Selectivity

Table III, below, provides a summary of various process conditions andthe tungsten (or tungsten nitride) overetch rate which is expected to beobtained at those process conditions. Table III also shows theselectivity for etching tungsten/tungsten nitride relative to tantalumpentoxide which is expected to be obtained, and the etched sidewallprofile angle which is expected to be obtained.

TABLE III Typical Process Conditions During Final Portion Etching(Overetch) of Tungsten or Tungsten Nitride With Underlying TantalumPentoxide Layer Process Condition Process Condition Process Conditionand Broad Preferred Result Range and Results Range and Results Total GasFlow 30-150 90-120 (sccm) O₂ Flow Rate 15-50 20-50 (sccm) Vol % O₂ inmixt. of O₂ 15-50 20-30 and Cl₂ Substrate 40-60 40-60 Temperature (° C.)Process Chamber 2-10 4-8 Pressure (mTorr) Source Power (W) 200-1800400-1800 Substrate Bias Power (W) 60-300 60-200 Etch Rate W or WN₂300-2200 1000-2000 (Å/min) Selectivity 10: 1 to 1000: 1 30: 1 to 600: 1W : Ta₂O₅ Etched Profile, Vertical or Vertical Vertical Tapered orUndercut (°)

The above described embodiments are not intended to limit the scope ofthe present invention, as one skilled in the art can, in view of thepresent disclosure, expand such embodiments to correspond with thesubject matter of the invention claimed below.

We claim:
 1. A method of plasma etching tungsten or tungsten nitride,wherein an etch selectivity of greater than about 75:1 is obtainedrelative to an adjacent silicon oxide layer by using a plasma source gascomprising chemically functional etchant species which are generatedfrom Cl₂ and O₂, wherein the volumetric percentage of O₂ in said plasmasource gas is at least 35%, and wherein a plasma density is at least1.6×10¹¹ e⁻/cm³.
 2. The method of claim 1, wherein said plasma densityis obtained by applying a source power of at least 1600 W.
 3. The methodof claim 1, wherein said etch selectivity is greater than about 100:1,said volumetric percentage of O₂ is at least 40%, and said plasmadensity is at least 1.65×10¹¹ e⁻/³.
 4. The method of claim 3, whereinsaid plasma density is obtained by applying a source power of at least1650 W.
 5. The method of claim 1, wherein said etch selectivity isgreater than about 175:1, said volumetric percentage of O₂ is at least45%, and said plasma density is at least 1.8×10¹¹ e⁻/cm³.
 6. The methodof claim 5, wherein said plasma density is obtained by applying a sourcepower of at least 1800 W.
 7. A method of selectively etching tungsten ortungsten nitride relative to an underlying oxide layer in semiconductorstructures, comprising: plasma etching a first majority portion of saidtungsten or tungsten nitride using a first plasma source gas comprisingat least one halogen-based chemically functional etchant species; andplasma etching a remaining portion of said tungsten or tungsten nitrideusing a second plasma source gas which employs chemically functionaletchant species generated from Cl₂ and O₂.
 8. The method of claim 7,wherein said underlying oxide is selected from the group consisting ofsilicon oxide, silicon oxynitride, tantalum pentoxide, zirconium oxide,and combinations thereof.
 9. The method of claim 8, wherein said halogenis selected from the group consisting of fluorine, chlorine, andcombinations thereof.
 10. The method of claim 9, wherein said firstmajority portion of said plasma etching is carried out using a firstplasma source gas selected from the group consisting of a combination ofSF₆ and N₂, and a combination of NF₃, Cl₂, and CF₄.
 11. The method ofclaim 9, wherein said underlying oxide comprises silicon oxide, andwherein a volumetric percentage of O₂ in said second plasma source gasis greater than 20% by volume.
 12. The method of claim 11, wherein saidO₂ volumetric percentage ranges from greater than 20% to about 45%. 13.The method of claim 9, wherein said underlying oxide comprises siliconoxide, and wherein a plasma density of said etchant plasma is at least8.0×10¹⁰ e⁻/cm³.
 14. The method of claim 13, wherein said plasma densityranges from about 8.0×10¹⁰ e⁻/³ to about 3.0×10¹¹ e⁻/³.
 15. The methodof claim 14, wherein said plasma density ranges from about 8.0×10¹⁰ e⁻/³to about 2.0×10¹¹ e⁻/³.
 16. The method of claim 13, wherein a plasmasource power ranges from about 800 W to about 3000 W.
 17. The method ofclaim 16, wherein said plasma source power ranges from about 800 W toabout 2000 W.
 18. The method of claim 9, wherein said underlying oxidecomprises silicon oxide, and wherein said etching which is carried outusing said plasma source gas comprising said chemically functionaletchant species generated from Cl₂ and O₂ is carried out in two steps,wherein a volumetric concentration of O₂ in a first step ranges fromgreater than 20% by volume to about 35% by volume, and wherein avolumetric concentration of O₂ in a second step ranges from greater thanabout 35% by volume to about 45% by volume.
 19. The method of claim 9,wherein said underlying oxide comprises tantalum pentoxide, and whereina volumetric percentage of O₂ in said second plasma source gas rangesfrom about 20% to about 50%.
 20. The method of claim 19, wherein saidunderlying oxide comprises tantalum pentoxide, and wherein a plasmadensity of said etchant plasma ranges from about 2.0×10¹⁰ e⁻/³ to about1.8×10¹¹ e⁻/³.
 21. The method of claim 20, wherein a plasma source powerranges from about 200 W to about 1800 W.
 22. The method of claim 19 ,wherein said underlying oxide comprises tantalum pentoxide, and asubstrate bias power ranges from about 60 W to about 300 W.
 23. A methodof selectively etching tungsten or tungsten nitride relative to anunderlying oxide layer in semiconductor structures, comprising: plasmaetching a first majority portion of said tungsten or tungsten nitrideusing a first plasma source gas comprising fluorine species; and plasmaetching a remaining portion of said tungsten or tungsten nitride using asecond plasma source gas comprising chemically functional etchantspecies generated from Cl₂ and O₂.
 24. The method of claim 23, whereinsaid underlying oxide is selected from the group consisting of siliconoxide, silicon oxynitride, tantalum pentoxide, zirconium oxide, andcombinations thereof.
 25. The method of claim 24, wherein said firstmajority portion of said plasma etching is carried out using a firstplasma source gas selected from the group consisting of a combination ofSF₆ and N₂, and a combination of NF₃, Cl₂, and CF₄.
 26. The method ofclaim 25, wherein said first plasma source gas comprises SF₆ and N₂, andwherein a volumetric ratio of SF₆:N₂ in said first plasma source gasranges from about 2:5 to about 6:1.
 27. The method of claim 24, or claim25, or claim 26, wherein said underlying oxide comprises silicon oxide,and wherein a volumetric percentage of O₂ in said second plasma sourcegas is greater than 20% by volume.
 28. The method of claim 27, whereinsaid O₂ volumetric percentage ranges from greater than 20% to about 45%.29. The method of claim 27, wherein a plasma density of said etchantplasma is at least 8.0×10¹⁰ e⁻/³.
 30. The method of claim 29, whereinsaid plasma density ranges from about 8.0×10¹⁰ e⁻/³ to about 3.0×10¹¹e⁻/³.
 31. The method of claim 30, wherein said plasma density rangesfrom about 8.0×10¹⁰ e⁻/cm³ to about 2.0×10¹¹ e⁻/cm³.
 32. The method ofclaim 27, wherein a plasma source power ranges from about 800 W to about3000 W.
 33. The method of claim 32, wherein said plasma source powerranges from about 800 W to about 2000 W.
 34. The method of claim 28,wherein a plasma density of said etchant plasma is at least 8.0×10¹⁰e⁻/cm³.
 35. The method of claim 34, wherein said plasma density rangesfrom about 8.0×10¹⁰ e⁻/cm³ to about 3.0×10¹¹ e⁻/cm³.
 36. The method ofclaim 34, wherein a plasma source power ranges from about 800 W to about3000 W.
 37. The method of claim 24, wherein said underlying oxidecomprises silicon oxide, and wherein said etching which is carried outusing said plasma source gas comprising chemically functional etchantspecies generated from Cl₂ and O₂ is carried out in two steps, wherein avolumetric concentration of O₂ in a first step ranges from greater than20% by volume to about 35% by volume, and wherein the volumetricconcentration of O₂ in a second step ranges from greater than about 35%by volume to about 45% by volume.
 38. The method of claim 37, wherein aplasma density during said first step ranges from about 8×10¹⁰ e⁻/cm³ toabout 1.6×10¹¹ e⁻/cm³, and wherein a plasma density during said secondstep ranges from about 1.6×10¹¹ e⁻/cm³ to about 3.0×10¹¹ e⁻/cm³.
 39. Themethod of claim 37, wherein a plasma source power during said first stepranges from about 800 W to about 1600 W, and wherein a plasma sourcepower during said second step ranges from about 1600 W to about 3000 W.40. The method of claim 24, wherein said underlying oxide comprisestantalum pentoxide, and wherein a volumetric percentage Of O₂ in saidsecond plasma source gas ranges from about 20% to about 50%.
 41. Themethod of claim 40, wherein said underlying oxide comprises tantalumpentoxide, and wherein a plasma density of said etchant plasma rangesfrom about 2.0×10¹⁰ e⁻/cm³ to about 1.8×10¹¹ e⁻/cm³.
 42. The method ofclaim 41, wherein a plasma source power ranges from about 200 W to about1800 W.
 43. The method of claim 40, wherein said underlying oxidecomprises tantalum pentoxide, and a substrate bias power ranges fromabout 60 W to about 300 W.
 44. A method of selectively etching tungstennitride relative to silicon oxide during the etching of semiconductorstructures, comprising: plasma etching a majority portion of saidtungsten nitride using a plasma source gas comprising fluorine species;and plasma etching a remaining portion of said tungsten nitride using asecond plasma source gas comprising chemically functional etchantspecies generated from Cl₂ and O₂, wherein said O₂ concentration isabout 35% by volume or greater, and wherein a plasma density of saidetchant plasma is about 1.6×10¹¹ e⁻/cm³ or greater.
 45. The method ofclaim 44, wherein said first majority portion of said plasma etching iscarried out using a first plasma source gas selected from the groupconsisting of a combination of SF₆ and N₂, and a combination of NF₃,Cl₂, and CF₄.
 46. The method of claim 44, wherein said plasma density iscreated by application of a plasma source power of 1600 W or greater.47. The method of claim 44, wherein said O₂ concentration is about 40%by volume or greater, and wherein a plasma density of said etchantplasma is about 1.8×10¹¹ e⁻/cm³ or greater.
 48. The method of claim 47,wherein said plasma density is created by application of a plasma sourcepower of 1800 W or greater.
 49. A method of plasma etching tungsten ortungsten nitride, wherein an etch selectivity of greater than about 75:1is obtained relative to an adjacent tantalum pentoxide layer by using aplasma source gas comprising chemically functional etchant species whichare generated from Cl₂ and O₂, wherein the volumetric percentage of O₂in said plasma source gas ranges from about 20% to about 50%, andwherein a plasma density ranges from about 2.0×10¹⁰ e⁻/cm³ to about1.8×10¹¹ e⁻/cm³.
 50. The method of claim 49, wherein said plasma densityis obtained by applying a source power within the range of about 200 Wto about 1800 W.
 51. The method of claim 49, wherein a substrate biaspower ranges from about 60 W to about 300 W.
 52. The method of claim 51,wherein a substrate bias power ranges from about 60 W to about 200 W.53. The method of claim 52, wherein a substrate bias power ranges fromabout 100 W to about 200 W.
 54. A method of selectively etching tungstennitride relative to tantalum pentoxide during the etching ofsemiconductor structures, comprising: plasma etching a majority portionof said tungsten nitride using a plasma source gas comprising fluorinespecies; and plasma etching a remaining portion of said tungsten nitrideusing a second plasma source gas comprising chemically functionaletchant species generated from Cl₂ and O₂, wherein said O₂ concentrationranges from about 20% to about 50% by volume, and wherein a plasmadensity of said etchant plasma ranges from about 2.0×10¹⁰ e⁻/cm³ toabout 1.8×10¹¹ e⁻/cm³.
 55. The method of claim 54, wherein said firstmajority portion of said plasma etching is carried out using a firstplasma source gas selected from the group consisting of a combination ofSF₆ and N₂, and a combination of NF₃, Cl₂, and CF₄.
 56. The method ofclaim 54, wherein said plasma density is obtained by applying a sourcepower within the range of about 200 W to about 1800 W.
 57. The method ofclaim 54, wherein a substrate bias power ranges from about 60 W to about200 W.
 58. The method of claim 51, wherein a substrate bias power rangesfrom about 60 W to about 200 W.
 59. The method of claim 52, wherein asubstrate bias power ranges from about 100 W to about 200 W.
 60. Asemiconductor gate structure comprising a layer of tungsten and anunderlying layer of tantalum pentoxide, deposited on a siliconsubstrate, wherein said tantalum pentoxide layer has thickness of lessthan about 100 Å.
 61. The semiconductor gate structure of claim 60,wherein said tantalum pentoxide layer has a thickness within the rangeof about 30 Å to about 50 Å.